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SBL1630-SBL1660
Vishay Lite-On Power Semiconductor
16A Schottky Barrier Rectifiers
Features
D Schottky barrier chip D Guard ring die constuction for transient
protection
D Low power loss, high efficiency D High current capability and low forward voltage
drop
D High surge capability D For use in low voltage, high frequency inverters,
free wheeling, and polarity protection application
D Plastic material - UL Recognition flammability
classification 94V-0
94 9537
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type SBL1630 SBL1635 SBL1640 SBL1645 SBL1650 SBL1660 TC=95C Symbol VRRM =VRWM V =VR Value 30 35 40 45 50 60 275 16 -65...+150 Unit V V V V V V A A C
Peak forward surge current Average forward current Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Thermal resistance junction to case Test Conditions IF=16A, TC=25C TC=25C TC=100C VR=4V, f=1MHz TL=const. Type SBL1630-SBL1645 SBL1650-SBL1660 Symbol VF VF IR IR CD RthJC Min Typ Max 0.57 0.75 1.0 50 Unit V V mA mA pF K/W
700 3.5
Rev. A2, 24-Jun-98
1 (4)
SBL1630-SBL1660
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFAV - Average Forward Current ( A ) 20 C D - Diode Capacitance ( pF ) 16 12 4000
Tj = 25C
1000
8
4 0 0 50 100 150
100 0.1
15349
1.0
10
100
15346
Tamb - Ambient Temperature ( C )
VR - Reverse Voltage ( V )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
100 IF - Forward Current ( A )
SBL1630 - SBL1645
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100 I R - Reverse Current ( mA )
Tj = 100C
10
10
SBL1650 - SBL1660
Tj = 75C
1.0
1.0
Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle
0.1
Tj = 25C
0.1 0.1
15347
0.3
0.5
0.7
0.9
15350
0.01 0 40 80 120 Percent of Rated Peak Reverse Voltage (%)
VF - Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
IFSM - Peak Forward Surge Current ( A ) 300 250 200 150 100 50 0
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
8.3 ms Single Half-Sine-Wave JEDEC method
1
10 Number of Cycles at 60 Hz
100
15348
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
SBL1630-SBL1660
Vishay Lite-On Power Semiconductor Dimensions in mm
14469
Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number
Rev. A2, 24-Jun-98
3 (4)
SBL1630-SBL1660
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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